inchange semiconductor isc product specification isc silicon npn power transistor 2SC4881 description collector-emitter breakdown voltage- : v (br)ceo = 50v(min) high switching speed low collector saturation voltage- : v ce(sat) = 0.4v(max)@ (i c = 2.5a, i b = 125ma) b applications designed for high current switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current-continuous 5 a i cm collector current-pulse 8 a i b b base current-continuous 1 a total power dissipation @t c =25 20 p t total power dissipation @t a =25 2.0 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC4881 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 50 v v ce (sat) collector-emitter saturation voltage i c = 2.5a; i b = 125ma 0.4 v v be (sat) base-emitter saturation voltage i c = 2.5a; i b = 125ma 1.3 v i cbo collector cutoff current v cb = 50v ; i e = 0 1 a i ebo emitter cutoff current v eb = 6v; i c = 0 1 a h fe-1 dc current gain i c = 1a ; v ce = 1v 100 320 h fe-2 dc current gain i c = 2.5a ; v ce = 1v 60 c ob output capacitance i e = 0 ; v cb = 10v; f= 1.0mhz 45 pf f t current-gain?bandwidth product i c = 1a ; v ce = 4v 100 mhz switching times t on turn-on time 0.1 s t stg storage time 0.8 s t f fall time r l = 12 ,i b1 = -i b2 = 125ma, v cc = 30v 0.1 s isc website www.iscsemi.cn 2
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